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| NTE232 Silicon PNP Transistor Darlington Amplifier, Preamp Description: The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Total Power Dissipation (TA = +25C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Power Dissipation (TC = +25C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500mW Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" 1/32" from case, 10sec), TL . . . . . . . . . . . . . . . +230C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Static Characteristics Collector-Emitter Breakdown Voltage V(BR)CES IC = 100A, IB = 0 Collector Cutoff Current Emitter Cutoff Current Forward Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter ON Voltage ICBO IEBO hFE VCB = 30V, IE = 0 VBE = 8V, IC = 0 IC = 10mA, VCE = 5V IC = 100mA, VCE = 5V VCE(sat) IC = 100mA, IB = 0.1mA VBE(on) IC = 100mA, VCE = 5V, Note 1 30 - - 50k 20k - - - - - - - 0.9 - 100 100 - - 1.5 V V V nA nA Symbol Test Conditions Min Typ Max Unit 1.45 2.00 Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Dynamic Characteristics Current Gain-Bandwidth Product Output Capacitance Noise Figure fT Ccb NF IC = 30mA, VCE = 10V, f = 50MHz ICB = 10mA, IE = 0, f = 100MHz IC = 1mA, VCE = 5V, RS = 100k, f = 1kHz 100 - - 125 2.5 2 - - - MHz pF dB Symbol Test Conditions Min Typ Max Unit .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max EBC .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
Price & Availability of NTE232
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